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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941T DESCRIPTION *High Voltage *DARLINGTON APPLICATIONS *High ruggedness electronic ignitions *High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 500 400 5 15 30 1 5 150 200 -65~200 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.2 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BU941T MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 1.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 2.5 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.7 0.1 0.5 0.1 0.5 20 V ICES Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj=125 VCE= 450V;IB= 0 VCE= 450V;IB= 0;Tj= 125 VEB= 5V; IC= 0 mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 5A ; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A 2.5 V isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941T isc Websitewww.iscsemi.cn |
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